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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION *With TO-220C package *Complement to type BD895A/897A/901A *DARLINGTON APPLICATIONS *For use in output stages in audio equipment, general amplifier,and analogue switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD896A/898A/900A
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER BD896A VCBO Collector-base voltage BD898A BD900A BD896A VCEO Collector-emitter voltage BD898A BD900A VEBO IC IB Emitter-base voltage Collector current-DC Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -8 -300 70 W V A mA V V UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD896A V(BR)CEO Collector-emitter breakdown voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A BD896A ICEO Collector cut-off current BD898A BD900A IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time IC=-4A ,IB=-16mA IC=-4A ; VCE=-3V VCB=-45V, IE=0 TC=100 VCB=-60V, IE=0 TC=100 VCB=-80V, IE=0 TC=100 VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IE=-8A IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10B;tp=20s IC=-100mA, IB=0 CONDITIONS SYMBOL
BD896A/898A/900A
MIN -45 -60 -80
TYP.
MAX
UNIT
V
-2.8 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0
V V
mA
-0.5
mA
-2 750 -3.5 1 5
mA
V s s
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT /W
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD896A/898A/900A
Fig.2 Outline dimensions
3


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